Title :
Circuit Techniques Utilizing Independent Gate Control in Double-Gate Technologies
Author :
Kuang, Jente B. ; Kim, Keunwoo ; Chuang, Ching-Te ; Ngo, Hung C. ; Gebara, Fadi H. ; Nowka, Kevin J.
Author_Institution :
Austin Res. Lab., IBM Res. Div., Austin, TX
Abstract :
Independent gate control in double-gate (DG) devices enhances circuit performance and robustness while substantially reducing leakage and chip area. In this paper, we describe circuit techniques which take advantage of the independent biasing properties of symmetrical and asymmetrical DG devices in design. DG circuits at the 25-nm node are analyzed via mixed-mode numerical simulations using Taurus MEDICI. In dynamic circuits, we give examples of conditional keepers, charge sharing prevention scheme, and static keepers. A conditional keeper can dynamically achieve the optimal strength ratio between keeper and evaluation devices by utilizing the front- and backchannel currents in DG devices. A charge sharing mitigation scheme utilizing the back-gate of a logic transistor is then described. Static data retention scheme in dynamic circuits is proposed. A case study for analog applications using a voltage controlled oscillator (VCO) illustrates the specific advantages of DG devices.
Keywords :
integrated circuit reliability; logic gates; numerical analysis; voltage-controlled oscillators; Taurus MEDICI; charge sharing mitigation; circuit performance; circuit techniques; double-gate devices; dynamic circuits; independent biasing; independent gate control; integrated circuit reliablity; logic transistor; mixed-mode numerical simulations; size 25 nm; voltage controlled oscillator; Analytical models; CMOS technology; Circuit analysis; Circuit optimization; Logic devices; Numerical simulation; Robust control; Silicon on insulator technology; Very large scale integration; Voltage-controlled oscillators; Back gate; circuit analysis; double-gate (DG) device; mix-mode simulator;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2008.2001564