DocumentCode :
983420
Title :
Data Memory Subsystem Resilient to Process Variations
Author :
Bennaser, Mahmoud ; Guo, Yao ; Moritz, Csaba Andras
Author_Institution :
Dept. of Comput. Eng., Kuwait Univ., Khaldiya
Volume :
16
Issue :
12
fYear :
2008
Firstpage :
1631
Lastpage :
1638
Abstract :
As technology scales, more sophisticated fabrication processes cause variations in many different parameters in the device. These variations could severely affect the performance of processors by making the latency of circuits less predictable and thus requiring conservative design approaches. In this paper, we use Monte Carlo simulations in addition to worst-case circuit analysis to establish the overall delay due to process variations in a data cache sub-system under both typical and worst-case conditions. The distribution of the cache critical-path-delay in the typical scenario was determined by performing Monte Carlo simulations at different supply voltages, threshold voltages, and transistor lengths on a complete cache design. In addition to establishing the delay variation, we present an adaptive variable-cycle-latency cache architecture that mitigates the impact of process variations on access latency by closely following the typical latency behavior rather than assuming a conservative worst-case design-point. Simulation results show that our adaptive data cache can achieve a 9% to 31% performance improvement in a superscalar processor, on the SPEC2000 applications studied, compared to a conventional design. The area overhead for the additional circuits of the adaptive technique has less than 1% of the total cache area. Additional performance improvement potential exists in processors where the data cache access is on the critical path, by allowing a more aggressive clock rate.
Keywords :
Monte Carlo methods; cache storage; Monte Carlo simulations; SPEC2000; adaptive variable-cycle-latency cache architecture; cache critical-path-delay; data cache sub-system; data memory subsystem; superscalar processor; worst-case circuit analysis; CMOS technology; Circuit analysis; Circuit simulation; Clocks; Delay; Fabrication; Integrated circuit technology; Manufacturing processes; Memory architecture; Threshold voltage; CMOS memory integrated circuits; memory architecture; process variations;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2008.2001299
Filename :
4668635
Link To Document :
بازگشت