Title :
Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s
Author :
Helme, John P. ; Houston, Peter A. ; Tan, Chee Hing
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield
fDate :
7/1/2009 12:00:00 AM
Abstract :
A charge control model was used to simulate the sensitivity and responsivity in a range of photodetector configurations including heterojunction bipolar phototransistors (HPTs), PIN-HBT, and APDs. Our simulations enabled for the first time a direct comparison of the performance between these photodetectors to be made. Simulations have been performed at bit rates from 2 to 40 Gb/s using various combinations of device design parameters (layer thickness, source resistance, and dc base voltage). For a BER=10-9 at 40 Gb/s the best sensitivity of approximately -20 dBm was achieved using an optimized APD-HBT configuration, followed by sensitivities of approximately -14 dBm using optimized PIN-HBTs and HPTs. These results were found to agree well with published experimental data.
Keywords :
heterojunction bipolar transistors; optical receivers; photodetectors; phototransistors; semiconductor device models; PIN-HBT; bit rate 2 Gbit/s to 40 Gbit/s; device design parameters; heterojunction bipolar phototransistors; large-signal charge control modeling; optimized APD-HBT configuration; photodetector configurations; photoreceivers; Absorption; Bit rate; Heterojunction bipolar transistors; Noise reduction; Optical control; Optical fiber devices; Optical noise; Photodetectors; Phototransistors; Semiconductor device noise; APDs; heterojunction bipolar phototransistors (HBTs); photoreceivers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2013127