GaAs HBT´s for high-speed digital integrated circuit applications

Author

Chang, Christopher T M ; Yuan, Han-tzong

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

81

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1727

Lastpage

1743

Abstract

GaAs HBT technology has emerged as one of the most important developments for digital circuits operating at clock frequencies of 100 MHz and higher. High-speed frequency dividers operating as high as 34.8 GHz and VLSI circuits as complex as 32-b CPU´s operating at 200-MHz clock rate have been demonstrated. This paper reviews the role of GaAs HBT technologies for high-speed digital IC applications. The requirements for high-speed IC´s and the characteristics of various HBT device structures and logic families are discussed. A summary of published results of the ultrahigh-speed circuits and the status of several high-speed VLSI circuits are presented to provide a guide for future developments

Keywords

III-V semiconductors; VLSI; bipolar integrated circuits; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; integrated logic circuits; reviews; GaAs; GaAs HBT technology; HBT device structures; digital integrated circuit applications; high-speed VLSI circuits; high-speed digital ICs; logic families; ultrahigh-speed circuits; Application specific integrated circuits; Clocks; Digital circuits; Digital integrated circuits; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Integrated circuit technology; Very large scale integration;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.248961

Filename

248961