Title :
Carrier lifetimes in silicon epitaxial layers deposited on oxygen-implanted substrates
Author :
Das, Krishanu ; Shorthouse, G.P. ; Butcher, J.B.
Author_Institution :
Middlesex Polytechnic, Microelectronics Centre, London, UK
Abstract :
Carrier lifetimes in silicon epitaxial layers deposited on high-dose oxygen-implanted wafers have been obtained from measurements of diode storage times. A figure of 1.25 ¿S was obtained for diodes in the implanted area, compared with 1.75 ¿S for diodes outside the implanted area on the same wafer. This marginal degradation of lifetime indicates that the dielectrically isolated structure should be able to support bipolar and dynamic logic devices.
Keywords :
carrier lifetime; electron-hole recombination; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; ion implantation; monolithic integrated circuits; semiconductor diodes; semiconductor epitaxial layers; semiconductor technology; silicon; IMPLOX; O2+ implanted wafers; Si epitaxial layers; Si substrate; bipolar logic devices; carrier lifetimes; dielectrically isolated structure; diode storage times; dynamic logic devices; electron-hole recombination; elemental semiconductor; lifetime degradation; semiconductor technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830098
