Title :
Fast photoconductive GaAs detectors made by laser stimulated MOCVD
Author :
Roth, W. ; Schumacher, Hermann ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
Photoconductive detectors with rise times less than 10 ps have been made from GaAs grown by laser-stimulated MOCVD. The growth temperature was 450°C, and laser pulse energy and pulse repetition frequency were 120 mJ and 10 Hz, respectively.
Keywords :
III-V semiconductors; chemical vapour deposition; electric sensing devices; gallium arsenide; photoconducting devices; photodetectors; semiconductor growth; 10 Hz; 120 mJ; 450degrees C; III-V semiconductors; electric sensing devices; growth temperature; laser pulse energy; laser pulse repetition frequency; laser stimulated MOCVD; metalorganic CVD; photoconductive GaAs detectors; semiconductor devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830100
