Title :
High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation
Author :
Ankri, D. ; Schaff, W.J. ; Smith, Paul ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithaca, USA
Abstract :
GaAlAs-GaAs heterojunction bipolar transistors (HBTs) with an abrupt emitter-base interface have been realised by molecular-beam epitaxy (MBE) on semi-insulating substrates. A gain-bandwidth product FT of 15 GHz has been measured for Ic = 20 mA and VCE = 8 V. These results are the best reported so far for HBTs and are very promising for high-speed logic.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; bipolar transistors; digital integrated circuits; gallium arsenide; molecular beam epitaxial growth; p-n heterojunctions; semiconductor growth; 15 GHz; GaAlAs-GaAs heterojunction bipolar transistors; HBT; HF operation; III-V semiconductors; MBE; abrupt emitter-base interface; bipolar IC; gain-bandwidth product; high-speed logic; near-ballistic operation; semiconductor growth; semiinsulating substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830104
