DocumentCode
983986
Title
High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation
Author
Ankri, D. ; Schaff, W.J. ; Smith, Paul ; Eastman, L.F.
Author_Institution
Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithaca, USA
Volume
19
Issue
4
fYear
1983
Firstpage
147
Lastpage
149
Abstract
GaAlAs-GaAs heterojunction bipolar transistors (HBTs) with an abrupt emitter-base interface have been realised by molecular-beam epitaxy (MBE) on semi-insulating substrates. A gain-bandwidth product FT of 15 GHz has been measured for Ic = 20 mA and VCE = 8 V. These results are the best reported so far for HBTs and are very promising for high-speed logic.
Keywords
III-V semiconductors; aluminium compounds; bipolar integrated circuits; bipolar transistors; digital integrated circuits; gallium arsenide; molecular beam epitaxial growth; p-n heterojunctions; semiconductor growth; 15 GHz; GaAlAs-GaAs heterojunction bipolar transistors; HBT; HF operation; III-V semiconductors; MBE; abrupt emitter-base interface; bipolar IC; gain-bandwidth product; high-speed logic; near-ballistic operation; semiconductor growth; semiinsulating substrates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830104
Filename
4247363
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