Title :
Analysis of radiative and nonradiative recombination law in lightly doped InGaAsP lasers
Author :
Thompson, G.H.B.
Author_Institution :
Standard Telecommunication Laboratories, Harlow, UK
Abstract :
A re-analysis of the recombination data of Su et al. on lightly doped InGaAsP lasers indicates that their figure for the Auger coefficient is uncertain and up to three times too low, does not support their claim of saturation in the radiative recombination, but confirms the presence of a second nonradiative mechanism more sensitively dependent on carrier concentration than the cube.
Keywords :
III-V semiconductors; carrier density; electron-hole recombination; gallium arsenide; indium compounds; semiconductor junction lasers; Auger coefficient; III-V semiconductor; carrier concentration; lightly doped InGaAsP lasers; nonradiative recombination; radiative recombination; recombination data; saturation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830108
