• DocumentCode
    984078
  • Title

    GaAs integrated digital-to-analogue convertor for control of power dual-gate FETs

  • Author

    Saunier, Paul ; Kim, Bumki ; Frensley, W.R.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, USA
  • Volume
    19
  • Issue
    5
  • fYear
    1983
  • Firstpage
    162
  • Lastpage
    163
  • Abstract
    We are reporting the design, fabrication and performance of a TTL compatible 4-bit GaAs integrated digital-to-analogue convertor with an output voltage between ¿2.8 V and +2.8 V. This circuit has been especially designed to control the gain of power dual-gate FETs by applying a voltage on the capacitively terminated second gate.
  • Keywords
    III-V semiconductors; digital-analogue conversion; field effect integrated circuits; gain control; gallium arsenide; microwave integrated circuits; 4 bit DAC; D/A convertors; FEIC; GaAs; III-V semiconductors; TTL compatible; capacitively terminated second gate; design; fabrication; gain control; monolithic microwave ICs; performance; power dual-gate FETs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830113
  • Filename
    4247387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=984078