Title :
0.66 ¿m room-temperature operation of InGaAlP DH laser diodes grown by MBE
Author :
Kawamura, Yuriko ; Asahi, H. ; Nagai, Hiroto ; Ikegami, Tomoaki
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Room-temperature pulsed operation of In0.49Ga0.31Al0.20P/In0.49Ga0.48Al0.03P/In0.49Ga0.31Al0.20P double heterostructure (DH) laser diodes has been achieved for the first time. The DH layers were grown by molecular beam epitaxy. The lasing wavelength was 0.66 ¿m and the threshold current density was 3.2¿3.6 × 104 A/cm2 at room temperature.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; III-V semiconductors; InGaAlP DH laser diodes; MBE; double heterostructure; molecular beam epitaxy; pulsed operation; room-temperature operation; semiconductor growth; semiconductor lasers; threshold current density; wavelength 0.66 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830114
