DocumentCode :
984111
Title :
Polarisation-dependent gain-current relationship in GaAs-AlGaAs MQW laser diodes
Author :
Kobayashi, Hideo ; Iwamura, Hideyuki ; Saku, T. ; Otsuka, Kanji
Author_Institution :
NTT, Musashino Electrical Communication Loboratory, Musashino, Japan
Volume :
19
Issue :
5
fYear :
1983
Firstpage :
166
Lastpage :
168
Abstract :
The polarisation-dependent gain spectra were measured for multi-quantum-well laser diodes. Differences in the gain-current relationship and in the peak gain wavelength between TE and TM polarisations are explained by a newly developed model.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light polarisation; semiconductor junction lasers; GaAs-AlGaAs; III-V semiconductors; MQW laser diodes; TE polarisation; TM polarisation; gain-current relationship; model; multiquantum-well laser diodes; peak gain wavelength; polarisation-dependent gain spectra; semiconductor lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19830116
Filename :
4247398
Link To Document :
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