• DocumentCode
    984184
  • Title

    Measurement of screened voltages by electron-beam-induced conductivity (EBIC)

  • Author

    Schink, H.K.

  • Author_Institution
    Siemens AG, Forschungslaboratorien, Mÿnchen, West Germany
  • Volume
    19
  • Issue
    5
  • fYear
    1983
  • Firstpage
    177
  • Lastpage
    178
  • Abstract
    A new method is introduced to measure screened voltages by EBIC. Some applications are shown.
  • Keywords
    electron beam applications; insulated gate field effect transistors; p-n junctions; semiconductor device testing; voltage measurement; EBIC; MOS transistors; applications; conducting layers; electron-beam-induced conductivity; insulating layers; internal voltage measurement; p-n junctions; screened voltage measurement; semiconductor device investigation; spatial resolution; voltage resolution; voltages of buried interconnections;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830123
  • Filename
    4247411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=984184