Title :
Dynamic behaviour of a GaAs-AlGaAs MQW laser diode
Author :
Iwamura, Hideyuki ; Saku, T. ; Ishibashi, Takayuki ; Otsuka, Kanji ; Horikoshi, Y.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A comparative study is given on the dynamic properties existing between a GaAs-AlGaAs multi-quantum-well (MQW) laser diode fabricated from an MBE-grown wafer and a conventional double-heterostructure laser diode. Spectral broadening and wavelength shift associated with deep injection current modulation were found to be much smaller in MQW laser diodes than in conventional DH laser diodes.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; DH laser diodes; GaAs-AlGaAs; III-V semiconductor; MBE; MQW laser diode; comparative study; deep injection current modulation; dynamic properties; multiquantum-well; semiconductor lasers; spectral broadening; wavelength shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830125
