DocumentCode
984288
Title
Comments on "Flash memory under cosmic and alpha irradiation"
Author
Cellere, Giorgio ; Paccagnella, Alessandro
Author_Institution
Dept. of Inf. Eng., Padova Univ., Italy
Volume
5
Issue
2
fYear
2005
fDate
6/1/2005 12:00:00 AM
Firstpage
296
Lastpage
297
Abstract
In the original paper by A.D. Fogle et al. (see ibid., vol.4, no.3, p.371-6, Sep. 2004), the authors discuss the effects of ionizing radiation on flash memories, concluding that the information stored in contemporary flash memories is almost insensitive to ionizing radiation. This result is in partial agreement with various papers recently presented in the literature, which unfortunately are not mentioned, with one exception. The present authors believe that data reported in some of these and in other papers quoted in this communication could help the interested reader to clarify the data presented by Fogle et al., through a critical comparison with existing results in the literature.
Keywords
alpha-particle effects; cosmic rays; flash memories; neutron effects; proton effects; alpha irradiation; cosmic irradiation; flash memory; ionizing radiation; neutron irradiation; proton irradiation; CMOS logic circuits; CMOS technology; Charge pumps; Decoding; Error correction; Flash memory; Ionizing radiation; Lead compounds; Nonvolatile memory; Random access memory;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2005.848069
Filename
1458748
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