Title :
Comments on "Flash memory under cosmic and alpha irradiation"
Author :
Cellere, Giorgio ; Paccagnella, Alessandro
Author_Institution :
Dept. of Inf. Eng., Padova Univ., Italy
fDate :
6/1/2005 12:00:00 AM
Abstract :
In the original paper by A.D. Fogle et al. (see ibid., vol.4, no.3, p.371-6, Sep. 2004), the authors discuss the effects of ionizing radiation on flash memories, concluding that the information stored in contemporary flash memories is almost insensitive to ionizing radiation. This result is in partial agreement with various papers recently presented in the literature, which unfortunately are not mentioned, with one exception. The present authors believe that data reported in some of these and in other papers quoted in this communication could help the interested reader to clarify the data presented by Fogle et al., through a critical comparison with existing results in the literature.
Keywords :
alpha-particle effects; cosmic rays; flash memories; neutron effects; proton effects; alpha irradiation; cosmic irradiation; flash memory; ionizing radiation; neutron irradiation; proton irradiation; CMOS logic circuits; CMOS technology; Charge pumps; Decoding; Error correction; Flash memory; Ionizing radiation; Lead compounds; Nonvolatile memory; Random access memory;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2005.848069