Title :
Postgrowth heat-treatment effects in high-purity liquid-phase-epitaxial In0.53Ga0.47As
Author :
Rao, Mulpuri V. ; Bhattacharya, P.K.
Author_Institution :
Oregon State University, Department of Electrical & Computer Engineering, Corvallis, USA
Abstract :
Heat treatment at 670°C for 20 min has been performed on high-purity In0.53Ga0.47As/InP: Fe layers grown by different melt-baking schemes. Layers with higher purity (¿77 K ¿ 55000 cm2/Vs) exhibit increased resistivity and the presence of a deep level after the heat treatment. It is possible that the deep level, apparently 0.56 eV above the valence band, results from Fe outdiffusion from the substrate.
Keywords :
Hall effect; III-V semiconductors; annealing; carrier mobility; deep levels; electronic conduction in crystalline semiconductor thin films; gallium arsenide; indium compounds; semiconductor epitaxial layers; Fe outdiffusion; Hall mobility semiconductor epitaxial layers; LPE layers; annealing; deep level; high-purity In0.53Ga0.47As/InP:Fe layers; melt-baking schemes; postgrowth heat treatment effects; resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830136
