• DocumentCode
    984308
  • Title

    Postgrowth heat-treatment effects in high-purity liquid-phase-epitaxial In0.53Ga0.47As

  • Author

    Rao, Mulpuri V. ; Bhattacharya, P.K.

  • Author_Institution
    Oregon State University, Department of Electrical & Computer Engineering, Corvallis, USA
  • Volume
    19
  • Issue
    6
  • fYear
    1983
  • Firstpage
    196
  • Lastpage
    197
  • Abstract
    Heat treatment at 670°C for 20 min has been performed on high-purity In0.53Ga0.47As/InP: Fe layers grown by different melt-baking schemes. Layers with higher purity (¿77 K ¿ 55000 cm2/Vs) exhibit increased resistivity and the presence of a deep level after the heat treatment. It is possible that the deep level, apparently 0.56 eV above the valence band, results from Fe outdiffusion from the substrate.
  • Keywords
    Hall effect; III-V semiconductors; annealing; carrier mobility; deep levels; electronic conduction in crystalline semiconductor thin films; gallium arsenide; indium compounds; semiconductor epitaxial layers; Fe outdiffusion; Hall mobility semiconductor epitaxial layers; LPE layers; annealing; deep level; high-purity In0.53Ga0.47As/InP:Fe layers; melt-baking schemes; postgrowth heat treatment effects; resistivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830136
  • Filename
    4247483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=984308