DocumentCode
984522
Title
Metal-Density-Driven Placement for CMP Variation and Routability
Author
Chen, Tung-Chieh ; Cho, Minsik ; Pan, David Z. ; Chang, Yao-Wen
Author_Institution
SpringSoft Inc., Hsinchu
Volume
27
Issue
12
fYear
2008
Firstpage
2145
Lastpage
2155
Abstract
In this paper, we propose the first metal-density-driven (MDD) placement algorithm to reduce chemical-mechanical planarization/polishing (CMP) variation and achieve higher routability. To efficiently estimate metal density and thickness, we first apply a probabilistic routing model and then a predictive CMP model to obtain the metal-density map. Based on the metal-density map, we use an analytical placement framework to spread blocks to reduce metal-density variation. Experimental results based on BoxRouter and NTUgr show that our method can effectively reduce the CMP variation. By using our MDD placement, for example, the topography variation can be reduced by up to 38% (23%) and the number of dummy fills can be reduced by up to 14% (8%), compared with those using wirelength-driven (cell-density-driven) placement. The results of our MDD placement can also lead to better routability.
Keywords
chemical mechanical polishing; integrated circuit manufacture; network routing; planarisation; BoxRouter; CMP routability; CMP variation; NTUgr; chemical-mechanical planarization/polishing; metal-density map; metal-density-driven placement; probabilistic routing; topography variation; Copper; Pins; Planarization; Predictive models; Routing; Semiconductor device modeling; Senior members; Surfaces; Timing; Wire; Manufacturability; VLSI; physical design; placement;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2008.2006148
Filename
4670072
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