• DocumentCode
    984522
  • Title

    Metal-Density-Driven Placement for CMP Variation and Routability

  • Author

    Chen, Tung-Chieh ; Cho, Minsik ; Pan, David Z. ; Chang, Yao-Wen

  • Author_Institution
    SpringSoft Inc., Hsinchu
  • Volume
    27
  • Issue
    12
  • fYear
    2008
  • Firstpage
    2145
  • Lastpage
    2155
  • Abstract
    In this paper, we propose the first metal-density-driven (MDD) placement algorithm to reduce chemical-mechanical planarization/polishing (CMP) variation and achieve higher routability. To efficiently estimate metal density and thickness, we first apply a probabilistic routing model and then a predictive CMP model to obtain the metal-density map. Based on the metal-density map, we use an analytical placement framework to spread blocks to reduce metal-density variation. Experimental results based on BoxRouter and NTUgr show that our method can effectively reduce the CMP variation. By using our MDD placement, for example, the topography variation can be reduced by up to 38% (23%) and the number of dummy fills can be reduced by up to 14% (8%), compared with those using wirelength-driven (cell-density-driven) placement. The results of our MDD placement can also lead to better routability.
  • Keywords
    chemical mechanical polishing; integrated circuit manufacture; network routing; planarisation; BoxRouter; CMP routability; CMP variation; NTUgr; chemical-mechanical planarization/polishing; metal-density map; metal-density-driven placement; probabilistic routing; topography variation; Copper; Pins; Planarization; Predictive models; Routing; Semiconductor device modeling; Senior members; Surfaces; Timing; Wire; Manufacturability; VLSI; physical design; placement;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.2008.2006148
  • Filename
    4670072