DocumentCode :
984522
Title :
Metal-Density-Driven Placement for CMP Variation and Routability
Author :
Chen, Tung-Chieh ; Cho, Minsik ; Pan, David Z. ; Chang, Yao-Wen
Author_Institution :
SpringSoft Inc., Hsinchu
Volume :
27
Issue :
12
fYear :
2008
Firstpage :
2145
Lastpage :
2155
Abstract :
In this paper, we propose the first metal-density-driven (MDD) placement algorithm to reduce chemical-mechanical planarization/polishing (CMP) variation and achieve higher routability. To efficiently estimate metal density and thickness, we first apply a probabilistic routing model and then a predictive CMP model to obtain the metal-density map. Based on the metal-density map, we use an analytical placement framework to spread blocks to reduce metal-density variation. Experimental results based on BoxRouter and NTUgr show that our method can effectively reduce the CMP variation. By using our MDD placement, for example, the topography variation can be reduced by up to 38% (23%) and the number of dummy fills can be reduced by up to 14% (8%), compared with those using wirelength-driven (cell-density-driven) placement. The results of our MDD placement can also lead to better routability.
Keywords :
chemical mechanical polishing; integrated circuit manufacture; network routing; planarisation; BoxRouter; CMP routability; CMP variation; NTUgr; chemical-mechanical planarization/polishing; metal-density map; metal-density-driven placement; probabilistic routing; topography variation; Copper; Pins; Planarization; Predictive models; Routing; Semiconductor device modeling; Senior members; Surfaces; Timing; Wire; Manufacturability; VLSI; physical design; placement;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2008.2006148
Filename :
4670072
Link To Document :
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