Title :
Ga0.47In0.53As/Al0.48In0.52As multiquantum-well LEDs emitting at 1.6 ¿m
Author :
Alavi, K. ; Pearsall, T.P. ; Forrest, Stephen R. ; Cho, Andrew Y.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
Edge-emitting diodes made from Ga0.47In0.53As and Al0.48In0.52As, grown lattice-matched on InP substrates by molecular beam epitaxy with room-temperature emission at 1.60 ¿m, are reported. A multiquantum-well structure is used to shift the emission by 54 meV from 0.73 eV toward higher energy.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting diodes; 1.6 microns wavelength; Ga0.47In0.53As/Al0.48In0.52 As; edge-emitting diodes; molecular beam epitaxy; multiquantum-well LEDs; room-temperature emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830157
