Title :
A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO
Author :
Lan, Xing ; Wojtowicz, M. ; Smorchkova, I. ; Coffie, R. ; Tsai, R. ; Heying, B. ; Truong, M. ; Fong, F. ; Kintis, M. ; Namba, C. ; Oki, A. ; Wong, T.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA
fDate :
7/1/2006 12:00:00 AM
Abstract :
A Q-band 40-GHz GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) based on AlGaN/GaN high electron mobility transistor technology has been demonstrated. The GaN VCO delivered an output power of +25dBm with phase noise of -92dBc/Hz at 100-KHz offset, and -120dBc/Hz at 1-MHz offset. To the best of our knowledge, this represents the state-of-the-art for GaN VCOs in terms of frequency, output power, and phase noise performance. This work demonstrates the potential for the use of GaN technology for high frequency, high power, and low phase noise frequency sources for military and commercial applications
Keywords :
HEMT integrated circuits; III-V semiconductors; MIMIC; aluminium compounds; gallium compounds; integrated circuit noise; millimetre wave oscillators; phase noise; voltage-controlled oscillators; wide band gap semiconductors; 40 GHz; AlGaN-GaN; high electron mobility transistors; monolithic microwave integrated circuit; phase noise; voltage controlled oscillators; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Phase noise; Power generation; Voltage-controlled oscillators; Gallium nitride; monolithic microwave integrated circuit (MMIC) oscillator; phase noise;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.877128
