DocumentCode
984861
Title
Simulation of dual conductor current access magnetic bubble devices
Author
Shenton, D. ; Charap, S.H. ; David, H. ; Kryder, M.H.
Author_Institution
Carnegie-Mellon University, Pittsburgh, Pennsylvania, USA.
Volume
17
Issue
6
fYear
1981
fDate
11/1/1981 12:00:00 AM
Firstpage
2677
Lastpage
2679
Abstract
A simulator for current-accessed dual-conductor magnetic bubble technology was implemented on a single-user graphics minicomputer and used to develop an exclusive or (XOR) logic gate and a bubble CROSSOVER circuit employing bubble-bubble interaction effects. Using the simulator, a designer can layout a chip on the graphics terminal, insert simulated bubbles into the device, and observe device operation and failure mechanisms (e.g. failure to propagate or bubble collapse), much as one presently observes failures in fabricated devices using magneto-optic techniques. The simulator program computes the currents in a conductor sheet with an arbitrary pattern of apertures using finite element techniques. Knowing the currents, the fields in the underlying magnetic bubble layer are calculated. Bubble-bubble interaction effects are taken into account by computing the fields of interacting bubbles. Bubble size is determined by a balance of forces from wall energy, magnetostatic energy, and energy from the bias field, currents, and bubble-bubble interaction fields. Materials parameters such as magnetization, film thickness, wall energy, coercivity, and mobility are all explicitly taken into account in the simulated device operation.
Keywords
Magnetic bubble devices; Circuit simulation; Computational modeling; Conductors; Graphics; Logic devices; Logic gates; Magnetic devices; Magnetic materials; Magnetostatics; Microcomputers;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1981.1061538
Filename
1061538
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