Title :
High-speed GaAs heterojunction bipolar phototransistor grown by molecular beam epitaxy
Author :
Ankri, D. ; Schaff, W.J. ; Barnard, J. ; Lunardi, L. ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Ithaca, USA
Abstract :
A novel heterojunction phototransistor (HPT) structure is proposed using two base regions such that the emitter-base depletion region is located in the wide-gap material. Very small area HPTs have been fabricated on semi-insulating substrates. Maximum current gain is ß = 300. The response time, with rise time as short as 250 ps and FWHM = 320 ps, has been obtained using a picosecond pulse dye laser.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; phototransistors; semiconductor epitaxial layers; GaAlAs-GaAs; GaAs heterojunction bipolar phototransistor; current gain; emitter-base depletion region; high speed device; molecular beam epitaxy; response time; rise time; wide-gap material;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830195
