• DocumentCode
    984910
  • Title

    High-speed GaAs heterojunction bipolar phototransistor grown by molecular beam epitaxy

  • Author

    Ankri, D. ; Schaff, W.J. ; Barnard, J. ; Lunardi, L. ; Eastman, L.F.

  • Author_Institution
    Cornell University, School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Ithaca, USA
  • Volume
    19
  • Issue
    8
  • fYear
    1983
  • Firstpage
    278
  • Lastpage
    280
  • Abstract
    A novel heterojunction phototransistor (HPT) structure is proposed using two base regions such that the emitter-base depletion region is located in the wide-gap material. Very small area HPTs have been fabricated on semi-insulating substrates. Maximum current gain is ß = 300. The response time, with rise time as short as 250 ps and FWHM = 320 ps, has been obtained using a picosecond pulse dye laser.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; phototransistors; semiconductor epitaxial layers; GaAlAs-GaAs; GaAs heterojunction bipolar phototransistor; current gain; emitter-base depletion region; high speed device; molecular beam epitaxy; response time; rise time; wide-gap material;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830195
  • Filename
    4247583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=984910