• DocumentCode
    984923
  • Title

    Stress tests on 1.3 ¿m buried-heterostructure laser diode

  • Author

    Ikegami, T. ; Takahei, K. ; Fukuda, M. ; Kuroiwa, K.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    19
  • Issue
    8
  • fYear
    1983
  • Firstpage
    282
  • Lastpage
    283
  • Abstract
    Preliminary results of the accelerated aging test under stresses of temperature and current are presented. The degradation modes are found to be divided into two patterns which can be mapped in co-ordinates of these stresses.
  • Keywords
    ageing; life testing; semiconductor device testing; semiconductor junction lasers; 1.3 micron wavelength; accelerated aging test; buried-heterostructure laser diode; degradation modes; semiconductor laser; stress tests;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830197
  • Filename
    4247587