DocumentCode
984923
Title
Stress tests on 1.3 ¿m buried-heterostructure laser diode
Author
Ikegami, T. ; Takahei, K. ; Fukuda, M. ; Kuroiwa, K.
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
19
Issue
8
fYear
1983
Firstpage
282
Lastpage
283
Abstract
Preliminary results of the accelerated aging test under stresses of temperature and current are presented. The degradation modes are found to be divided into two patterns which can be mapped in co-ordinates of these stresses.
Keywords
ageing; life testing; semiconductor device testing; semiconductor junction lasers; 1.3 micron wavelength; accelerated aging test; buried-heterostructure laser diode; degradation modes; semiconductor laser; stress tests;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830197
Filename
4247587
Link To Document