Title :
X-band fully depleted SOI Amplifier with adaptive bias control
Author :
Chen, C.L. ; Wyatt, P.W. ; Chen, C.K. ; Knecht, J.M. ; Yost, D.-R. ; Drangmeister, R.G. ; Keast, C.L.
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA
fDate :
7/1/2005 12:00:00 AM
Abstract :
A 10-GHz amplifier with an adaptive bias control circuit is realized using fully depleted SOI CMOS technology. The effective gate bias of the amplifier MOSFET adjusts itself based on the power level of the input signal. Measured results showed reduction of overall power consumption and wider range of output power near its peak efficiency. At absence of the signal, the amplifier can be automatically switched to a standby mode with approximately 85% reduction of power consumption. Power saving is also demonstrated for pulsed signal modulated at 10 MHz.
Keywords :
CMOS integrated circuits; MOSFET; microwave amplifiers; radiofrequency integrated circuits; silicon-on-insulator; 10 GHz; 10 MHz; CMOS technology; RF circuit; X-band amplifier; adaptive bias control; amplifier MOSFET; automatic bias control; fully depleted SOI amplifier; microwave amplifier; power consumption; power level; Adaptive control; CMOS technology; Energy consumption; MOSFET circuits; Power MOSFET; Power amplifiers; Power measurement; Programmable control; Pulse amplifiers; Pulse modulation; Automatic bias control; SOI; Si RF circuit; microwave amplifier;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.851554
