X-band fully depleted SOI Amplifier with adaptive bias control

Author

Chen, C.L. ; Wyatt, P.W. ; Chen, C.K. ; Knecht, J.M. ; Yost, D.-R. ; Drangmeister, R.G. ; Keast, C.L.

Author_Institution

Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA

Volume

15

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

451

Lastpage

453

Abstract

A 10-GHz amplifier with an adaptive bias control circuit is realized using fully depleted SOI CMOS technology. The effective gate bias of the amplifier MOSFET adjusts itself based on the power level of the input signal. Measured results showed reduction of overall power consumption and wider range of output power near its peak efficiency. At absence of the signal, the amplifier can be automatically switched to a standby mode with approximately 85% reduction of power consumption. Power saving is also demonstrated for pulsed signal modulated at 10 MHz.

Keywords

CMOS integrated circuits; MOSFET; microwave amplifiers; radiofrequency integrated circuits; silicon-on-insulator; 10 GHz; 10 MHz; CMOS technology; RF circuit; X-band amplifier; adaptive bias control; amplifier MOSFET; automatic bias control; fully depleted SOI amplifier; microwave amplifier; power consumption; power level; Adaptive control; CMOS technology; Energy consumption; MOSFET circuits; Power MOSFET; Power amplifiers; Power measurement; Programmable control; Pulse amplifiers; Pulse modulation; Automatic bias control; SOI; Si RF circuit; microwave amplifier;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.851554

Filename

1458806