DocumentCode
984944
Title
Effect of electric fields on long-wavelength response of infra-red detectors
Author
Coon, D.D. ; Karunasiri, R.P.G.
Author_Institution
University of Pittsburgh, Department of Physics, Pittsburgh, USA
Volume
19
Issue
8
fYear
1983
Firstpage
284
Lastpage
287
Abstract
The effect of electric fields on extrinsic semiconductor infrared-detector response at low temperatures is examined quantitatively at wavelengths beyond the zero-field cutoff. General formulas are presented along with numerical results for Si:P and Si:In. These results illustrate the possibility of narrow-bandwidth detection and electronically modulated response.
Keywords
elemental semiconductors; indium; infrared detectors; phosphorus; silicon; IR detector; Si:In; Si:P; electric field effects; electronically modulated response; extrinsic semiconductor; infrared detector; long-wavelength response; low temperatures; narrow-bandwidth detection; zero-field cutoff;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830199
Filename
4247590
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