• DocumentCode
    984944
  • Title

    Effect of electric fields on long-wavelength response of infra-red detectors

  • Author

    Coon, D.D. ; Karunasiri, R.P.G.

  • Author_Institution
    University of Pittsburgh, Department of Physics, Pittsburgh, USA
  • Volume
    19
  • Issue
    8
  • fYear
    1983
  • Firstpage
    284
  • Lastpage
    287
  • Abstract
    The effect of electric fields on extrinsic semiconductor infrared-detector response at low temperatures is examined quantitatively at wavelengths beyond the zero-field cutoff. General formulas are presented along with numerical results for Si:P and Si:In. These results illustrate the possibility of narrow-bandwidth detection and electronically modulated response.
  • Keywords
    elemental semiconductors; indium; infrared detectors; phosphorus; silicon; IR detector; Si:In; Si:P; electric field effects; electronically modulated response; extrinsic semiconductor; infrared detector; long-wavelength response; low temperatures; narrow-bandwidth detection; zero-field cutoff;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830199
  • Filename
    4247590