DocumentCode :
984944
Title :
Effect of electric fields on long-wavelength response of infra-red detectors
Author :
Coon, D.D. ; Karunasiri, R.P.G.
Author_Institution :
University of Pittsburgh, Department of Physics, Pittsburgh, USA
Volume :
19
Issue :
8
fYear :
1983
Firstpage :
284
Lastpage :
287
Abstract :
The effect of electric fields on extrinsic semiconductor infrared-detector response at low temperatures is examined quantitatively at wavelengths beyond the zero-field cutoff. General formulas are presented along with numerical results for Si:P and Si:In. These results illustrate the possibility of narrow-bandwidth detection and electronically modulated response.
Keywords :
elemental semiconductors; indium; infrared detectors; phosphorus; silicon; IR detector; Si:In; Si:P; electric field effects; electronically modulated response; extrinsic semiconductor; infrared detector; long-wavelength response; low temperatures; narrow-bandwidth detection; zero-field cutoff;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19830199
Filename :
4247590
Link To Document :
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