Design and Fabrication of ZnO-Based FBAR Microwave Devices for Mobile WiMAX Applications

Author

Mai, Linh ; Lee, Jae-young ; Pham, Van-Su ; Yoon, Giwan

Author_Institution

Inf. & Commun. Univ., Daejeon

Volume

17

Issue

12

fYear

2007

Firstpage

867

Lastpage

869

Abstract

In this letter, we present the design and fabrication of a novel ZnO-based film bulk acoustic wave resonator (FBAR) microwave devices. The novel FBAR devices employ a new-type of Bragg reflector with very thin chromium (Cr) layer formed between SiO₂ and W films. The Cr layer seems to enhance the adhesion between SiO₂ and W layers. The novel FBAR devices show good return losses (S₁₁) and high Q-factors at the frequency range of 2.7-3.0 GHz. This approach will be very helpful for mobile worldwide interoperability for microwave access applications.

Keywords

WiMax; acoustic microwave devices; acoustic resonators; bulk acoustic wave devices; zinc compounds; Bragg reflector; FBAR microwave devices; ZnO; film bulk acoustic wave resonator microwave devices; mobile WiMAX; Acoustic waves; Adhesives; Chromium; Fabrication; Film bulk acoustic resonators; Frequency; Microwave devices; Optical films; Q factor; WiMAX; $Q$-factor; Bragg reflector; film bulk acoustic wave resonator (FBAR); resonator; return loss; worldwide interoperability for microwave access (WiMAX);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.910495

Filename

4385738