Title :
A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Author :
van Raay, F. ; Quay, R. ; Kiefer, R. ; Benkhelifa, F. ; Raynor, B. ; Pletschen, W. ; Kuri, M. ; Massler, H. ; Müller, S. ; Dammann, M. ; Mikulla, M. ; Schlechtweg, M. ; Weimann, G.
Author_Institution :
Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany
fDate :
7/1/2005 12:00:00 AM
Abstract :
This work presents a two-stage high-power amplifier monolithic microwave integrated circuit (MMIC) operating between 9 GHz and 11 GHz based on a fully integrated AlGaN/GaN high electron mobility transistor (HEMT) technology on s.i. SiC substrate and is suitable for radar applications. The MMIC device with a chip size of 4.5×3 mm2 yields a linear gain of 20 dB and a maximum pulsed saturated output power of 13.4 W at 10 GHz equivalent to 3.3 W/mm at VDS=35V, 10% duty cycle, and a gain compression level of 5 dB. Further, dc reliability data are given for the MMIC HEMT technology.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; coplanar waveguides; gallium compounds; microstrip lines; radar applications; silicon compounds; wide band gap semiconductors; 13.4 W; 20 dB; 35 V; 9 to 11 GHz; AlGaN-GaN; MMIC HEMT technology; MMIC device; MMIC power amplifier; MODFET; SiC; coplanar X-band power amplifier; coplanar waveguide; dc reliability data; gain compression level; high electron mobility transistor; microstrip line; microwave power field effect transistor amplifiers; modulation-doped field effect transistors; monolithic microwave integrated circuit; phased array radar; radar applications; two-stage high-power amplifier; Aluminum gallium nitride; Gallium nitride; HEMTs; High power amplifiers; MMICs; Microwave amplifiers; Microwave devices; Microwave integrated circuits; Power amplifiers; Silicon carbide; Coplanar waveguide (CPW); microstrip (MSL); microwave power field effect transistors (FET) amplifiers; modulation-doped field effect transistors (MODFETs); phased array radar; reliability;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.851560
