DocumentCode :
984961
Title :
Comparison of noise characteristics of Fabry-Perot-type and travelling-wave-type semiconductor laser amplifiers
Author :
Simon, J.C. ; Favennec, J.L. ; Charil, J.
Author_Institution :
CNET, LAB/MER/FOG, Lanmon, France
Volume :
19
Issue :
8
fYear :
1983
Firstpage :
288
Lastpage :
290
Abstract :
We report results of comparative noise measurements on AlGaAs semiconductor laser amplifiers of the Fabry-Perot and travelling-wave types. We show that, for the same net gain, the electrical baseband signal/noise ratio of a photodetector placed at the amplifier output (after an optical filter) is higher for a travelling-wave-type amplifier, especially at high-gain values where the Fabry-Perot amplifier is operated at oscillation threshold. For a net gain of 20.5 dB, the signal/noise ratio of the travelling-wave-type amplifier is 4¿5 dB better.
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; semiconductor junction lasers; AlGaAs semiconductor laser amplifiers; Fabry-Perot type laser; electrical baseband signal/noise ratio; noise characteristics; photodetector; travelling-wave type laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19830201
Filename :
4247592
Link To Document :
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