Title :
Stable mode-locked operation up to 80 °C from an InGaAs quantum-dot laser
Author :
Cataluna, M.A. ; Rafailov, E.U. ; McRobbie, A.D. ; Sibbett, W. ; Livshits, D.A. ; Kovsh, A.R.
Author_Institution :
Sch. of Phys. & Astron., Univ. of St. Andrews, UK
fDate :
7/1/2006 12:00:00 AM
Abstract :
We demonstrate the mode-locked operation of a two-section quantum-dot laser in a broad temperature range. Stable mode-locking was observed at temperatures ranging from 20 °C to 70 °C, with signal-to-noise ratios well over 20 dB and a -3-dB linewidth smaller than 80 kHz. In the temperature range between 70 °C and 80 °C, the mode-locking was less stable. It was found that in order to provide stable mode-locked operation with increasing temperature, the reverse bias on the absorber section must be reduced accordingly.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; laser stability; quantum dot lasers; 20 to 70 degC; 80 degC; InGaAs; InGaAs laser; broad-temperature-range laser; quantum-dot laser; signal-to-noise ratio; stable mode-locking; two-section laser; Indium gallium arsenide; Laser mode locking; Laser stability; Molecular beam epitaxial growth; Physics; Pump lasers; Quantum dot lasers; Temperature dependence; Temperature distribution; Waveguide lasers; Broad temperature range; mode-locked lasers; quantum dots (QDs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.877589
