A D-band frequency doubler MMIC based on a 100-nm metamorphic HEMT technology

Author

Campos-Roca, Yolanda ; Schwörer, Christoph ; Leuther, Arnulf ; Seelmann-Eggebert, Matthias ; Massler, Hermann

Author_Institution

Univ. of Extremadura, Caceres, Spain

Volume

15

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

466

Lastpage

468

Abstract

A coplanar single-ended frequency doubler based on a 100 nm metamorphic HEMT technology is presented. For an input power of 4.8 dBm, this doubler demonstrates an output power between 2.6 and -0.3 dBm over the bandwidth from 105 to 145 GHz, that is, a 3-dB bandwidth of 32% has been achieved. To the knowledge of the authors, this is the first reported multiplier based on MHEMT technology at D-band or higher frequencies.

Keywords

HEMT integrated circuits; MMIC frequency convertors; coplanar waveguides; frequency multipliers; 100 nm; 105 to 145 GHz; D-band frequency doubler; MHEMT technology; MMIC; coplanar single-ended frequency doubler; coplanar waveguide; frequency multiplier; metamorphic HEMT technology; metamorphic high electron mobility transistor; Bandwidth; Coplanar waveguides; Frequency; Gallium arsenide; HEMTs; Indium phosphide; Isolation technology; MMICs; Submillimeter wave technology; mHEMTs; Coplanar waveguide (CPW); MMIC; frequency multiplier; metamorphic high electron mobility transistor (MHEMT);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.851566

Filename

1458811