• DocumentCode
    985003
  • Title

    Tuning characteristics of optical amplification in 1.5 ¿m InGaAsP/InP lasers

  • Author

    Kuwahara, Hideo ; Chikama, T. ; Nakagami, T.

  • Author_Institution
    Fujitsu Laboratories Ltd., Kawasaki, Japan
  • Volume
    19
  • Issue
    8
  • fYear
    1983
  • Firstpage
    295
  • Lastpage
    297
  • Abstract
    The bias current dependence of tuning wavelength in an optical amplifier is investigated in detail. Tuning wavelength decreases below threshold at the rate of ¿0.36 Å/mA, mainly due to the change of carrier density, and increases at the rate of 0.11 A/mA above threshold due to the thermal effect.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser tuning; semiconductor junction lasers; 1.5 microns wavelength; InGaAsP/InP lasers; bias current dependence; carrier density; optical amplification; semiconductor laser; thermal effect; tuning wavelength;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830206
  • Filename
    4247598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985003