Title :
Tuning characteristics of optical amplification in 1.5 ¿m InGaAsP/InP lasers
Author :
Kuwahara, Hideo ; Chikama, T. ; Nakagami, T.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
The bias current dependence of tuning wavelength in an optical amplifier is investigated in detail. Tuning wavelength decreases below threshold at the rate of ¿0.36 Å/mA, mainly due to the change of carrier density, and increases at the rate of 0.11 A/mA above threshold due to the thermal effect.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser tuning; semiconductor junction lasers; 1.5 microns wavelength; InGaAsP/InP lasers; bias current dependence; carrier density; optical amplification; semiconductor laser; thermal effect; tuning wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830206
