Slanted-rib waveguide InGaAsP-InP polarization converters

Author

El-Refaei, Hatem ; Yevick, David ; Jones, Trevor

Volume

22

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

1352

Lastpage

1357

Abstract

We summarize experimental and theoretical results for a compact (330 μm), low-loss on-chip InGaAsP-InP polarization converter. The converter, which contains a single asymmetric rib waveguide segment, exhibits a measured conversion efficiency of -16 dB and a response of ±3 dB with a maximum excess loss of 0.02 dB over the entire wavelength region from 1530 to 1570 nm.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light polarisation; optical communication equipment; optical fabrication; optical losses; optical polarisers; optical waveguide components; optical waveguides; 0.02 dB; 1530 to 1570 nm; 330 mum; InGaAsP-InP; asymmetric rib waveguide segment; compact polarization converter; conversion efficiency; excess loss; low-loss on-chip InGaAsP-InP polarization converter; on-chip polarization converters; slanted-rib waveguide InGaAsP-InP polarization converters; Optical polarization; Optical receivers; Optical refraction; Optical transmitters; Optical waveguides; Rectangular waveguides; Semiconductor waveguides; Wavelength conversion; Wavelength division multiplexing; Wavelength measurement; Integrated optics; TDM; WDM; polarization; rib waveguides; semiconductor epitaxial layer; semiconductor waveguide; time-division multiplexing; wavelength-division multiplexing;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2004.825349

Filename

1298863