• DocumentCode
    985053
  • Title

    GaAs/GaAlAs active-passive-interference laser

  • Author

    Choi, H.K. ; Wang, S.

  • Author_Institution
    University of California, Department of Electrical Engineering & Computer Sciences and the Electronics Research Laboratory, Berkeley, USA
  • Volume
    19
  • Issue
    8
  • fYear
    1983
  • Firstpage
    302
  • Lastpage
    303
  • Abstract
    A GaAs/GaAlAs interference laser with an active and a passive section is reported. A very clean single longitudinal mode is obtained and maintained without mode hopping over about 10°C, which results from the combined effect of interference and real index waveguiding in the lateral direction.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; semiconductor junction lasers; GaAs/GaAlAs interference laser; active section; longitudinal mode; passive section; real index waveguiding; semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830210
  • Filename
    4247612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985053