DocumentCode
985166
Title
Integral packaging for millimetre-wave GaAs IMPATT diodes prepared by molecular beam epitaxy
Author
Bayraktaroglu, B. ; Shih, H.D.
Author_Institution
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Volume
19
Issue
9
fYear
1983
Firstpage
327
Lastpage
329
Abstract
A novel `integrating packaging¿ technique was developed to package high-frequency, double-drift GaAs diodes fabricated from wafers prepared by molecular beam epitaxy (MBE). All devices were tested in microstrip resonator circuits. CW and pulse oscillations up to 109 GHz were obtained.
Keywords
III-V semiconductors; IMPATT diodes; gallium arsenide; molecular beam epitaxial growth; packaging; semiconductor growth; solid-state microwave devices; CW oscillations; GaAs impatt diodes; MBE; double drift diodes; frequency 109 GHz; integral packaging; microstrip resonator circuits; mm-wave diodes; molecular beam epitaxy; pulse oscillations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830226
Filename
4247662
Link To Document