Title :
Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD
Author :
Razeghi, M. ; Hersee, S. ; Hirtz, P. ; Blondeau, R. ; de Cremoux, B. ; Duchemin, J.P.
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Abstract :
Room-temperature GaInAsP/InP DH lasers emitting at 1.3 ¿m and having very low threshold current densities have been grown by LP MOCVD. Thresholds were lower than the best values reported for comparable devices grown by LPE, the lowest threshold being 430 A/cm2 for a cavity length of 950 ¿m (width 150 ¿m) with an active-layer thickness of d = 2200 A.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaInAsP/InP DH lasers; LP MOCVD; VPE; emission wavelength 1.3 micron; low threshold current densities; threshold 430 Angstrom/cm2;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830232
