• DocumentCode
    985245
  • Title

    Determination of the effective channel thickness of the MESFETs based on transconductance parameter β measurement

  • Author

    Moon, Byung-Jong ; Helix, Max J.

  • Author_Institution
    Vitesse Semiconductor Corp., Camarillo, CA, USA
  • Volume
    40
  • Issue
    1
  • fYear
    1993
  • fDate
    1/1/1993 12:00:00 AM
  • Firstpage
    32
  • Lastpage
    34
  • Abstract
    A method for extracting the effective channel thickness of MESFETs fabricated in fully ion-implanted processes is proposed. This method is based on the measurement of the transconductance parameter β. Since the expression for β includes the velocity saturation effect, the extracted effective channel thickness is comparable to simulation results. This method allows convenient extraction of the effective channel thickness of fully implanted MESFETs
  • Keywords
    Schottky gate field effect transistors; electrical conductivity measurement; semiconductor device testing; MESFETs; effective channel thickness; fully ion-implanted processes; transconductance parameter; velocity saturation effect; Doping profiles; Equations; Gallium arsenide; Ion implantation; MESFETs; Modems; Moon; Thickness measurement; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.249420
  • Filename
    249420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985245