Title :
Determination of the effective channel thickness of the MESFETs based on transconductance parameter β measurement
Author :
Moon, Byung-Jong ; Helix, Max J.
Author_Institution :
Vitesse Semiconductor Corp., Camarillo, CA, USA
fDate :
1/1/1993 12:00:00 AM
Abstract :
A method for extracting the effective channel thickness of MESFETs fabricated in fully ion-implanted processes is proposed. This method is based on the measurement of the transconductance parameter β. Since the expression for β includes the velocity saturation effect, the extracted effective channel thickness is comparable to simulation results. This method allows convenient extraction of the effective channel thickness of fully implanted MESFETs
Keywords :
Schottky gate field effect transistors; electrical conductivity measurement; semiconductor device testing; MESFETs; effective channel thickness; fully ion-implanted processes; transconductance parameter; velocity saturation effect; Doping profiles; Equations; Gallium arsenide; Ion implantation; MESFETs; Modems; Moon; Thickness measurement; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
