Title :
High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method
Author :
Shimizu, Kazuhiro ; Sugiura, Osamu ; Matsumura, Masakiyo
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
1/1/1993 12:00:00 AM
Abstract :
High-mobility poly-Si thin-film transistors (TFTs) were fabricated by a novel excimer laser crystallization method based on dual-beam irradiation. The new method can reduce the solidification velocity of the top Si layer by heating the bottom Si layer of the Si/SiO2/Si/glass substrate structure by means of laser irradiation not only from the front side but also from the back side. The grain size of poly-Si film was enlarged up to 2 μm. The field-effect mobilities of the TFT exceeded 380 cm2/V-s for electrons and 100 cm2/V-s for holes
Keywords :
carrier mobility; crystallisation; elemental semiconductors; laser beam effects; thin film transistors; Si-SiO2-Si; back side; dual-beam irradiation; excimer laser crystallization method; field-effect mobilities; front side; grain size; polysilicon TFTs; solidification velocity; thin-film transistors; Crystallization; Glass; Grain size; Heating; Semiconductor films; Solid lasers; Substrates; Temperature; Thermal conductivity; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
