Title :
Unified quasi-static MOSFET capacitance model
Author :
Rho, Kwang-Myoung ; Lee, Kwyro ; Shur, Michael ; Fjeldly, Tor A.
Author_Institution :
Hyundai Electronics Industries Co. Ltd., Kyoungki, South Korea
fDate :
1/1/1993 12:00:00 AM
Abstract :
An accurate calculation of MOSFET capacitance-voltage (C V) characteristics has to account for the bulk charge which is affected by nonuniform doping profiles and short-channel effects. In an approach based on the unified charge control model (UCCM), the voltage dependencies of the bulk charge are related to the standard parameters of the body plots which are routinely measured during MOSFET characterization. The results of the C-V calculations based on this model are in good agreement with experimental data and calculations based on the standard BSIM model. Compared to the BSIM simulations, the present model more accurately describes capacitances related to the bulk charge and the device subthreshold behavior, and it is suitable for incorporation into circuit simulators
Keywords :
capacitance; insulated gate field effect transistors; semiconductor device models; C-V calculations; MOSFET; bulk charge; capacitance model; capacitance-voltage characteristics; circuit simulators; device subthreshold behavior; nonuniform doping profiles; short-channel effects; unified charge control model; unified quasistatic model; voltage dependencies; Capacitance; Capacitance-voltage characteristics; Charge measurement; Circuit simulation; Current measurement; Doping profiles; MOSFET circuits; Measurement standards; Semiconductor process modeling; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
