Title :
Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs
Author :
Fjeldly, Tor A. ; Shur, Michael
Author_Institution :
Dept. of Phys. Electron., Norwegian Inst. of Technol., Trondheim, Norway
fDate :
1/1/1993 12:00:00 AM
Abstract :
An analytical model for the subthreshold regime of operation of short-channel MOSFETs is presented, and expressions for the threshold-voltage shift associated with the drain-induced barrier lowering (DIBL) caused by the application of a drain bias are developed. The amount of drain-bias-induced depletion charge in the channel is estimated, and an expression for the distribution of this charge along the channel is developed. From this distribution, it is possible to find the lowering of the potential barrier between the source and the channel, and the corresponding threshold-voltage shift. The results are compared with experimental data for deep-submicrometer NMOS devices. Expressions for the subthreshold current and for a generalized unified charge control model (UCCM) for short-channel MOSFETs are presented. The theory is applicable to deep-submicrometer devices with gate lengths larger than 0.1 μm. The model is suitable for implementation in circuit simulators
Keywords :
insulated gate field effect transistors; semiconductor device models; 0.1 micron; analytical model; circuit simulators; deep-submicrometer NMOS devices; depletion charge; drain bias; drain-induced barrier lowering; short-channel MOSFETs; submicron devices; subthreshold current; threshold-voltage shift; unified charge control model; Analytical models; Circuit simulation; Councils; Counting circuits; Electrodes; MOS devices; MOSFETs; Poisson equations; Subthreshold current; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
