Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs

Author

Fjeldly, Tor A. ; Shur, Michael

Author_Institution

Dept. of Phys. Electron., Norwegian Inst. of Technol., Trondheim, Norway

Volume

40

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

137

Lastpage

145

Abstract

An analytical model for the subthreshold regime of operation of short-channel MOSFETs is presented, and expressions for the threshold-voltage shift associated with the drain-induced barrier lowering (DIBL) caused by the application of a drain bias are developed. The amount of drain-bias-induced depletion charge in the channel is estimated, and an expression for the distribution of this charge along the channel is developed. From this distribution, it is possible to find the lowering of the potential barrier between the source and the channel, and the corresponding threshold-voltage shift. The results are compared with experimental data for deep-submicrometer NMOS devices. Expressions for the subthreshold current and for a generalized unified charge control model (UCCM) for short-channel MOSFETs are presented. The theory is applicable to deep-submicrometer devices with gate lengths larger than 0.1 μm. The model is suitable for implementation in circuit simulators

Keywords

insulated gate field effect transistors; semiconductor device models; 0.1 micron; analytical model; circuit simulators; deep-submicrometer NMOS devices; depletion charge; drain bias; drain-induced barrier lowering; short-channel MOSFETs; submicron devices; subthreshold current; threshold-voltage shift; unified charge control model; Analytical models; Circuit simulation; Councils; Counting circuits; Electrodes; MOS devices; MOSFETs; Poisson equations; Subthreshold current; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249436

Filename

249436