DocumentCode
985447
Title
(GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base
Author
Miller, Douglas L. ; Asbeck, P.M. ; Anderson, R.J. ; Eisen, F.H.
Author_Institution
Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA
Volume
19
Issue
10
fYear
1983
Firstpage
367
Lastpage
368
Abstract
The first fabrication and high-speed operation of a three-terminal (AlGa)As/GaAs heterojunction bipolar transistor with graded bandgap base is reported. Cutoff frequencies up to 16 GHz have been achieved in devices fabricated from material made by molecular beam epitaxy. This work demonstrates the feasibility of using a graded (AlGa)As base to enhance the speed of heterojunction bipolar transistors.
Keywords
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; p-n heterojunctions; (GaAl)As/GaAs heterojunction bipolar transistors; 16 GHz cutoff frequency; III-V semiconductors; MBE; fabrication; graded bandgap base; graded base composition; high speed operation; molecular beam epitaxy; semiconductor technology; three terminal device;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830254
Filename
4247700
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