Title :
0.81 ¿m band AlGaAs/GaAs double-channel planar buried-heterostructure laser with large optical cavity
Author :
Ueno, M. ; Kawano, H. ; Furuse, T. ; Sakuma, I.
Author_Institution :
Nippon Electric Co. Ltd., Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
0.81 ¿m-band AlGaAs/GaAs double-channel planar buried-heterostructure laser diodes with large optical cavity have been developed as light sources for use in analogue optical fibre communication systems. Linear light-output/current characteristics and a single-longitudinal-mode spectrum at a modulation frequency f = 100 MHz with modulation index m = 0.9 have been attained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; semiconductor junction lasers; 0.81 micron band; 100 MHz; AlGaAs/GaAs; III-V semiconductors; analogue optical fibre communication systems; diodes; double channel; large optical cavity; light sources; linear light output current characteristics; modulation frequency; modulation index; planar buried heterostructure laser; semiconductor laser; semiconductor technology; single longitudinal-mode spectrum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830256
