A high speed 0.6-μm 16 K CMOS gate array on a thin SIMOX film

Author

Yamaguchi, Yasuo ; Ishibashi, Atsuhiko ; Shimizu, Masahiro ; Nishimura, Tadashi ; Tsukamoto, Katsuhiro ; Horie, Kazuo ; Akasaka, Yoichi

Author_Institution

Mitsubishi Electric Corp., Mizuhara Itami, Japan

Volume

40

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

179

Lastpage

186

Abstract

0.6-μm CMOS technologies were developed on thin SIMOX film and applied to a 16 K gate CMOS gate array. High-speed operation with low power consumption characteristics was verified with ring oscillators on the thin SOI CMOS gate array with V_D=3 V, compared with bulk-Si ring oscillators with the same dimension. Parasitic capacitances in thin SOI and bulk-Si circuits were estimated to clarify the origin of the speed gain from the propagation delay times of the ring oscillators with various kinds of controlled load capacitances. Full functional operation was achieved for a 16 b×16 b multiplier on the SOI CMOS gate array with 1.4 times higher speed operation and 0.8 times lower power consumption than the multiplier on a bulk-Si substrate

Keywords

CMOS integrated circuits; SIMOX; digital arithmetic; logic arrays; multiplying circuits; 0.6 micron; CMOS gate array; SOI; Si; high speed; low power consumption characteristics; propagation delay times; ring oscillators; thin SIMOX film; CMOS technology; Doping; Electrical resistance measurement; Electrodes; Isolation technology; MOSFET circuits; Q measurement; Sea measurements; Silicides; Tungsten;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249442

Filename

249442