Fabrication and characterization of field-plated buried-gate SiC MESFETs

Author

Andersson, K. ; Sudow, M. ; Nilsson, P.-A. ; Sveinbjornsson, E. ; Hjelmgren, Hans ; Nilsson, J. ; Stahl, J. ; Zirath, H. ; Rorsman, N.

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

27

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

573

Lastpage

575

Abstract

Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-μm gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation.

Keywords

Schottky gate field effect transistors; microwave field effect transistors; silicon compounds; wide band gap semiconductors; SiC; buried-channel technique; field gated buried gate MESFET; field-plate technique; silicon carbide MESFET; Electron traps; Etching; Fabrication; Gold; Lithography; MESFETs; Microwave devices; Power generation; Silicon carbide; Thermal conductivity; Buried-gate; field-plate (FP); microwave power; silicon carbide (SiC) MESFET;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.877285

Filename

1644831