Capacitance/voltage characteristics of semiconductor-insulator-semiconductor (SIS) structure

Ideal capacitance/voltage curves of Si(2)-SiO2-Si(1) structure are computed in the absence of surface states and oxide changes with the SiO2 thickness, conductivity types, impurity concentrations of Si(1) and (2) as parameters. Impurity concentrations of Si(1), (2) and SiO2 thickness can be estimated from the measured capacitance/voltage curves by comparing them with the calculated ones as is the case with the conventional MOS structure.