DocumentCode
985510
Title
Capacitance/voltage characteristics of semiconductor-insulator-semiconductor (SIS) structure
Author
Nagai, Kanto ; Hayashi, Yasuhiro ; Sekigawa, Toshihiro
Author_Institution
Electrotechnical Laboratory, Tsukuba, Japan
Volume
19
Issue
10
fYear
1983
Firstpage
376
Lastpage
377
Abstract
Ideal capacitance/voltage curves of Si(2)-SiO2-Si(1) structure are computed in the absence of surface states and oxide changes with the SiO2 thickness, conductivity types, impurity concentrations of Si(1) and (2) as parameters. Impurity concentrations of Si(1), (2) and SiO2 thickness can be estimated from the measured capacitance/voltage curves by comparing them with the calculated ones as is the case with the conventional MOS structure.
Keywords
doping profiles; elemental semiconductors; impurity distribution; insulating thin films; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; C/V curves; SIS structure; Si-SiO2-Si; SiO2 thicknesses; capacitance/voltage characteristics; conductivity types; impurity concentrations; semiconductor-insulator-semiconductor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830260
Filename
4247708
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