Title :
A study of interband tunneling under nonuniform electric field
Author :
Chakraborty, Paritosh Kumar
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
fDate :
1/1/1993 12:00:00 AM
Abstract :
An attempt is made to find the interband funneling rate in semiconductor devices (such as MOSFET, p-n tunnel diodes, etc.) in the presence of an electric field where the electric field in the tunneling region varies linearly with the space coordinate. The analysis offers interband tunneling current for a two-band, single-electron model using crystal momentum representation techniques. The evaluation of tunneling rate is more general than that recently reported by M. Takayanagi and S. Iwabuchi (1991)
Keywords :
electric fields; semiconductor device models; tunnelling; MOSFET; crystal momentum representation; electric field; interband tunneling; nonuniform electric field; p-n tunnel diodes; semiconductor devices; single-electron model; tunneling current; tunneling rate; two-band model; Breakdown voltage; Differential equations; FETs; MOSFET circuits; Nonuniform electric fields; Schrodinger equation; Semiconductor devices; Semiconductor diodes; Tunneling; Wave functions;
Journal_Title :
Electron Devices, IEEE Transactions on
