DocumentCode
985520
Title
Modeling the voltage coefficient of linear MOS capacitor
Author
Chen, Hung-Sheng ; Tantasood, Prateep ; Chen, Hsin-Yih ; Yeh, Chune-Sin ; Teng, Chih-Sieh
Author_Institution
National Semiconductor Corp., Santa Clara, CA, USA
Volume
40
Issue
1
fYear
1993
fDate
1/1/1993 12:00:00 AM
Firstpage
220
Lastpage
222
Abstract
A one-dimensional model for analyzing the voltage coefficient of the linear MOS capacitor is presented. This model takes into account the capacitances and the charge-coupling effect of the polysilicon gate and the underlying substrate in calculating the voltage coefficient of a poly-to-silicon capacitor. The voltage dependences of the polysilicon-gate MOS capacitors are analyzed, modeled, and compared with measured data
Keywords
capacitors; metal-insulator-semiconductor devices; semiconductor device models; semiconductor-insulator boundaries; capacitances; charge-coupling effect; linear MOS capacitor; one-dimensional model; polysilicon-gate; polysilicon/oxide/Si structure; substrate; voltage coefficient; CMOS analog integrated circuits; CMOS technology; Capacitance; Dielectric substrates; Doping; MOS capacitors; Semiconductor process modeling; Silicon; Switched capacitor circuits; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.249447
Filename
249447
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