Oxide-silicon-oxide buffer structure for ultralow temperature polycrystalline silicon thin-film transistor on plastic substrate

Author

Kim, Yong-Hae ; Chung, Choong-Heui ; Moon, Jaehyun ; Kim, Gi Heon ; Park, Dong-Jin ; Kim, Dae-Won ; Lim, Jung Wook ; Yun, Sun Jin ; Song, Yoon-Ho ; Lee, Jin Ho

Author_Institution

Basic Res. Lab., Korea Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

27

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

579

Lastpage

581

Abstract

A novel oxide-silicon-oxide buffer structure to prevent damage to a plastic substrate in an ultralow temperature (<120°C) polycrystalline silicon thin-film transistor (ULTPS TFT) process is presented. Specifically, an amorphous silicon film was inserted as an absorption layer into buffer oxide films. The maximum endurable laser energy was increased from 200 to 800 mJ/cm². The fabricated ULTPS nMOS TFT showed a performance with mobility of 30 cm²/Vs.

Keywords

amorphous semiconductors; buffer circuits; elemental semiconductors; semiconductor-insulator boundaries; silicon; thin film transistors; absorption layer; amorphous silicon film; buffer oxide films; oxide silicon oxide buffer structure; plastic substrate; thin film transistor; ultralow temperature polycrystalline silicon; Absorption; Dielectric substrates; Displays; Inorganic materials; MOS devices; Plasma temperature; Plastics; Semiconductor films; Silicon; Thin film transistors; Buffer; flat-panel display; polycrystalline silicon (poly-Si); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.877713

Filename

1644833