• DocumentCode
    985531
  • Title

    Design modeling of high-efficiency p+-n indium phosphide solar cells

  • Author

    Jain, Raj K. ; Flood, Dennis J.

  • Author_Institution
    NASA Lewis Res. Center, Cleveland, OH, USA
  • Volume
    40
  • Issue
    1
  • fYear
    1993
  • fDate
    1/1/1993 12:00:00 AM
  • Firstpage
    224
  • Lastpage
    227
  • Abstract
    A parametric study of p+-n indium phosphide solar cells has been conducted using the PC-1D computer program. The effect of base doping on cell efficiency has been studied, and it is found that cell efficiency is a maximum for impurity concentrations around 1017 cm-3. The variation of minority-carrier diffusion length as a function of base doping has been included. Using realistic values of electronic and material parameters, cell efficiencies in excess of 24% AM0 (25°C) are predicted
  • Keywords
    III-V semiconductors; carrier lifetime; electronic engineering computing; impurity distribution; indium compounds; minority carriers; semiconductor device models; semiconductor doping; solar cells; 24 percent; PC-1D computer program; base doping; cell efficiency; design modelling; high-efficiency; impurity concentrations; minority-carrier diffusion length; p+-n device; solar cells; Bandwidth; Circuit simulation; Electrical resistance measurement; Electrons; Frequency; Gallium arsenide; Geometry; Indium phosphide; Photovoltaic cells; Semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.249448
  • Filename
    249448
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985531