Title :
High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization
Author :
Su, C.-J. ; Lin, H.C. ; Huang, T.Y.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
7/1/2006 12:00:00 AM
Abstract :
Thin-film transistors with poly-Si nanowire (NW) channels enhanced by metal-induced lateral crystallization (MILC) are reported. The new device features a side-gate with self-aligned NW channels abutting the sidewalls of the gate structure. By adopting the MILC technique, the crystallinity of the NW channels is greatly enhanced, compared to those formed by solid-phase crystallization. As a result, the electrical performance of the devices could be significantly enhanced in terms of reduced subthreshold swing and threshold voltage as well as improved field-effect mobility.
Keywords :
crystallisation; elemental semiconductors; nanowires; silicon; thin film transistors; Si; Si nanowire channels; field effect mobility; metal induced lateral crystallization; solid phase crystallization; thin film transistors; Annealing; Crystallization; Driver circuits; Liquid crystal displays; Optical device fabrication; Optical microscopy; Semiconductor thin films; Silicon; Thin film transistors; Threshold voltage; Metal-induced lateral crystallization (MILC); nanowires (NWs); thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.877708
