High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization

Author

Su, C.-J. ; Lin, H.C. ; Huang, T.Y.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

27

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

582

Lastpage

584

Abstract

Thin-film transistors with poly-Si nanowire (NW) channels enhanced by metal-induced lateral crystallization (MILC) are reported. The new device features a side-gate with self-aligned NW channels abutting the sidewalls of the gate structure. By adopting the MILC technique, the crystallinity of the NW channels is greatly enhanced, compared to those formed by solid-phase crystallization. As a result, the electrical performance of the devices could be significantly enhanced in terms of reduced subthreshold swing and threshold voltage as well as improved field-effect mobility.

Keywords

crystallisation; elemental semiconductors; nanowires; silicon; thin film transistors; Si; Si nanowire channels; field effect mobility; metal induced lateral crystallization; solid phase crystallization; thin film transistors; Annealing; Crystallization; Driver circuits; Liquid crystal displays; Optical device fabrication; Optical microscopy; Semiconductor thin films; Silicon; Thin film transistors; Threshold voltage; Metal-induced lateral crystallization (MILC); nanowires (NWs); thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.877708

Filename

1644834