Injection current model of a MOS diode under charge-sharing mode readout operation

Author

Wu, Chao-Wen ; Lin, Hao-Hsiung

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

40

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

227

Lastpage

229

Abstract

Based on the Shockley diffusion theory, an injection current model for the metal-oxide-semiconductor (MOS) charge injection device (CID) under charge-sharing mode readout scheme is proposed. It is found that the relation of the injection current and the surface potential follows the ideal diode equation. A photocurrent method is developed to verify the model and the extracted ideality factor is very close to unity. An equivalent SPICE model of the MOS diode is derived and the simulated transient readout response fits the experimental data quite well

Keywords

SPICE; metal-insulator-semiconductor devices; semiconductor device models; semiconductor diodes; transient response; MOS diode; Shockley diffusion theory; charge-sharing mode; equivalent SPICE model; ideal diode equation; ideality factor; injection current model; metal-oxide-semiconductor; photocurrent method; readout operation; simulated transient readout response; surface potential; Chaos; Charge carrier processes; Charge coupled devices; Charge transfer; Electrons; Equations; MOS capacitors; Potential well; SPICE; Semiconductor diodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249449

Filename

249449