• DocumentCode
    985547
  • Title

    Scaling of small-signal equivalent circuit elements for GaInP/GaAs hole-barrier bipolar transistors (HBBT)

  • Author

    Schaper, U. ; Bachem, K.H. ; Kärner, M. ; Zwicknagl, P.

  • Author_Institution
    Siemens Res. Lab., Munchen, Germany
  • Volume
    40
  • Issue
    1
  • fYear
    1993
  • fDate
    1/1/1993 12:00:00 AM
  • Firstpage
    222
  • Lastpage
    224
  • Abstract
    The development of a small-signal model for the HBBT including bias and geometry scaling is described. The elements of the equivalent circuit are directly related to the properties of the epitaxial layer sequence. Model verification is carried out by comparison of measured and simulated S-parameters of a broadband amplifier
  • Keywords
    III-V semiconductors; bipolar transistors; equivalent circuits; gallium arsenide; gallium compounds; indium compounds; semiconductor device models; GaInP-GaAs; RF modelling; bias scaling; broadband amplifier; epitaxial layer sequence; equivalent circuit elements; geometry scaling; hole-barrier bipolar transistors; simulated S-parameters; small-signal model; Bipolar transistors; Circuit simulation; Equivalent circuits; Gallium arsenide; Geometry; Heterojunction bipolar transistors; P-n junctions; Scattering parameters; Semiconductor process modeling; Solid modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.249454
  • Filename
    249454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=985547