Title :
Scaling of small-signal equivalent circuit elements for GaInP/GaAs hole-barrier bipolar transistors (HBBT)
Author :
Schaper, U. ; Bachem, K.H. ; Kärner, M. ; Zwicknagl, P.
Author_Institution :
Siemens Res. Lab., Munchen, Germany
fDate :
1/1/1993 12:00:00 AM
Abstract :
The development of a small-signal model for the HBBT including bias and geometry scaling is described. The elements of the equivalent circuit are directly related to the properties of the epitaxial layer sequence. Model verification is carried out by comparison of measured and simulated S-parameters of a broadband amplifier
Keywords :
III-V semiconductors; bipolar transistors; equivalent circuits; gallium arsenide; gallium compounds; indium compounds; semiconductor device models; GaInP-GaAs; RF modelling; bias scaling; broadband amplifier; epitaxial layer sequence; equivalent circuit elements; geometry scaling; hole-barrier bipolar transistors; simulated S-parameters; small-signal model; Bipolar transistors; Circuit simulation; Equivalent circuits; Gallium arsenide; Geometry; Heterojunction bipolar transistors; P-n junctions; Scattering parameters; Semiconductor process modeling; Solid modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
