Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress

Author

Saha, D. ; Varghese, D. ; Mahapatra, S.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India

Volume

27

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

585

Lastpage

587

Abstract

Interface trap (N_IT) generation and recovery due to broken ≡Si-H bonds at the Si/SiO₂ interface is studied during and after hot carrier injection (HCI) stress and verified by a two-dimensional reaction-diffusion model. N_IT generation and recovery characteristics do not correlate with channel hot electron (HE) density distribution (verified by Monte Carlo simulations). Anode hole injection, which is triggered by HE injection into the gate poly, and valence band hole tunneling, which is triggered for thinner oxides, must be invoked to properly explain experimental results. The observed hole-induced, not electron-induced, breaking of ≡Si-H bonds during HCI stress is also consistent with that for negative bias temperature instability stress.

Keywords

Monte Carlo methods; anodes; electron density; elemental semiconductors; hot carriers; interface states; silicon; silicon compounds; valence bands; 2D reaction diffusion model; Monte Carlo simulation; Si-SiO₂; anode hole injection; channel hot electron density distribution; hot carrier injection stress; interface trap generation; negative bias temperature instability stress; valence band hole tunneling; Anodes; Electron traps; Helium; Hot carrier injection; Human computer interaction; Negative bias temperature instability; Predictive models; Semiconductor device modeling; Stress; Tunneling; Anode hole injection (AHI); charge pumping (CP); hot carrier injection (HCI); interface traps; reaction–diffusion (R–D) model; valence-band-hole tunneling (VBHT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.876310

Filename

1644835